MT53E384M32D2DS-053 AIT:E TR |
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
- |
5,136 |
R1LP0408DSB-5SR#S0 |
Renesas Electronics America |
IC SRAM 4MBIT 55NS 32TSOP |
32-SOIC (0.400", 10.16mm Width) |
2,560 |
MT29E1T208ECHBBJ4-3:B |
Micron Technology Inc. |
IC FLASH 1.125T PARALLEL VBGA |
- |
18,000 |
MT52L1DAPF-DC |
Micron Technology Inc. |
LPDDR3 8G |
- |
4,000 |
MT29F256G08EBHAFJ4-3RES:A TR |
Micron Technology Inc. |
IC FLASH 256G PARALLEL 333MHZ |
- |
5,136 |
24AA512/S16K |
Microchip Technology |
IC EEPROM 512K I2C 400KHZ WAFER |
Die |
7,952 |
MT53D384M32D2DS-046 AIT:C |
Micron Technology Inc. |
IC DRAM 12G 2133MHZ |
- |
7,872 |
MX29F400CBTI-70G |
Macronix |
IC FLASH 4MBIT 70NS 48TSOP |
48-TFSOP (0.724", 18.40mm Width) |
4,816 |
MSM51V18160F-60T3-K7 |
Rohm Semiconductor |
IC DRAM 16MBIT 60NS 50TSOP |
- |
22,380 |
BR93L56F-WE2 |
Rohm Semiconductor |
IC EEPROM 2KBIT 2MHZ 8SOP |
8-SOIC (0.173", 4.40mm Width) |
201,240 |