MT53D512M64D4NW-053 WT ES:E TR |
Micron Technology Inc. |
IC DRAM 32G 1866MHZ FBGA |
- |
5,536 |
AS4C512M8D3B-12BIN |
Alliance Memory, Inc. |
IC DRAM 4G PARALLEL 78FBGA |
78-VFBGA |
4,992 |
V29F010B-120PC |
Cypress Semiconductor Corp |
IC MEMORY NOR |
- |
6,704 |
R1WV6416RBG-5SI#S0 |
Renesas Electronics America |
64M MCP(2X32M) ADV.SRAM 3V FBGA |
48-TFBGA |
5,024 |
S25FL512SDSBHI210 |
Cypress Semiconductor Corp |
IC FLASH 512M SPI 80MHZ 24BGA |
24-TBGA |
7,728 |
BR25H080F-2LBH2 |
Rohm Semiconductor |
IC EEPROM 8K SPI 10MHZ 8SOP |
8-SOIC (0.173", 4.40mm Width) |
3,248 |
S25FS256SAGMFM000 |
Cypress Semiconductor Corp |
IC 256M FLASH MEMORY |
- |
4,672 |
BR25H256FJ-2ACE2 |
Rohm Semiconductor |
IC EEPROM 256K SPI 10MHZ 8SOPJ |
8-SOIC (0.154", 3.90mm Width) |
22,302 |
DS28E80Q+U |
Maxim Integrated |
IC EEPROM 2K 1WIRE 6TDFN |
6-WDFN Exposed Pad |
7,008 |
AT45DB021E-MHN2B-T |
Adesto Technologies |
IC FLASH 2MBIT 70MHZ 8UDFN |
8-UDFN Exposed Pad |
5,280 |