TC58BYG2S0HBAI6 |
Toshiba Semiconductor and Storage |
IC EEPROM 4GBIT 25NS 67VFBGA |
67-VFBGA |
6,976 |
CY7C1412KV18-250BZXI |
Cypress Semiconductor Corp |
IC SRAM 36MBIT 250MHZ 165FBGA |
165-LBGA |
6,688 |
DS28E15P+ |
Maxim Integrated |
IC EEPROM 512BIT 1WIRE 6TSOC |
6-LSOJ (0.148", 3.76mm Width) |
18,912 |
S-25C040A0I-J8T1G |
SII Semiconductor Corporation |
IC EEPROM 4KBIT 5MHZ 8SOP |
8-SOIC (0.154", 3.90mm Width) |
5,696 |
25AA160CT-I/ST |
Microchip Technology |
IC EEPROM 16KBIT 10MHZ 8TSSOP |
8-TSSOP (0.173", 4.40mm Width) |
5,568 |
AS7C3256A-12JIN |
Alliance Memory, Inc. |
IC SRAM 256KBIT 12NS 28SOJ |
28-BSOJ (0.300", 7.62mm Width) |
6,224 |
MT29F1G08ABADAH4-ITE:D TR |
Micron Technology Inc. |
IC FLASH 1GBIT 20NS 63VFBGA |
63-VFBGA |
2,144 |
IS43DR16320C-25DBI-TR |
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 400MHZ 84BGA |
84-TFBGA |
5,280 |
MT46V64M8P-5B AIT:J |
Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 66TSOP |
66-TSSOP (0.400", 10.16mm Width) |
6,592 |
71V321L25JG |
IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 25NS 52PLCC |
52-LCC (J-Lead) |
6,208 |